WAS350M12BM3 FET, MOSFET Arrays_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode_LED light emitting diode

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WAS350M12BM3


：	WAS350M12BM3
：	FET, MOSFET Arrays
：	Wolfspeed
：	SIC 2N-CH 1200V
：	-
：	Box
：	100
：

: 100

1

$922.6600

$922.6600

10

$890.4800

$8,904.8000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Wolfspeed
Series	-
Package	Box
Product Status	ACTIVE
Package / Case	Module
Mounting Type	Chassis Mount
Configuration	2 N-Channel (Half Bridge)
Operating Temperature	-40°C ~ 150°C (TJ)
Technology	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	417A (Tc)
Input Capacitance (Ciss) (Max) @ Vds	25700pF @ 800V
Rds On (Max) @ Id, Vgs	5.2mOhm @ 350A, 15V
Gate Charge (Qg) (Max) @ Vgs	844nC @ 15V
Vgs(th) (Max) @ Id	3.6V @ 85mA

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0755- 323 302 3678

scarlett@usecgi.com

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