TPD3215M FET, MOSFET Arrays_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode

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TYPE	DESCRIPTION
Mfr	Transphorm
Series	-
Package	Bulk
Product Status	OBSOLETE
Package / Case	Module
Mounting Type	Through Hole
Configuration	2 N-Channel (Half Bridge)
Operating Temperature	-40°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Power - Max	470W
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds	2260pF @ 100V
Rds On (Max) @ Id, Vgs	34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs	28nC @ 8V
Supplier Device Package	Module

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