SSM6K818R,LF Single FETs, MOSFETs_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode


：	SSM6K818R,LF
：	Single FETs, MOSFETs
：	Toshiba Electronic Devices and Storage Corporation
：	N-CH MOSFET 30V
：	-
：	Tape & Reel (TR)
：	5710
：	1

: 5710

$0.6700

$0.5800

$5.8000

100

$0.4000

$40.0000

500

$0.3400

$170.0000

1000

$0.2900

$290.0000

3000

$0.2500

$750.0000

6000

$0.2400

$1,440.0000

9000

$0.2300

$2,070.0000

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Product parameters

TYPE	DESCRIPTION
Mfr	Toshiba Electronic Devices and Storage Corporation
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	6-SMD, Flat Leads
Mounting Type	Surface Mount
Operating Temperature	150°C
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Rds On (Max) @ Id, Vgs	12mOhm @ 4A, 4.5V
Power Dissipation (Max)	1.5W (Ta)
Vgs(th) (Max) @ Id	2.1V @ 100µA
Supplier Device Package	6-TSOP-F
Grade	Automotive
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1130 pF @ 15 V
Qualification	AEC-Q101

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