NXH100T120L3Q0S1NG IGBT Modules_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode_LED light emitting diode

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NXH100T120L3Q0S1NG


：	NXH100T120L3Q0S1NG
：	IGBT Modules
：	Sanyo Semiconductor/onsemi
：	1200V GEN III Q
：	-
：	Tray
：	124
：	1

: 124

1

$60.5700

$60.5700

24

$55.0700

$1,321.6800

48

$53.2300

$2,555.0400

96

$49.5600

$4,757.7600

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Product parameters

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TYPE	DESCRIPTION
Mfr	Sanyo Semiconductor/onsemi
Series	-
Package	Tray
Product Status	ACTIVE
Package / Case	Module
Mounting Type	Chassis Mount
Input	Standard
Configuration	Three Level Inverter
Operating Temperature	-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 75A
NTC Thermistor	Yes
Supplier Device Package	18-PIM/Q0PACK (55x32.5)
Current - Collector (Ic) (Max)	54 A
Voltage - Collector Emitter Breakdown (Max)	650 V
Power - Max	122 W
Current - Collector Cutoff (Max)	200 µA
Input Capacitance (Cies) @ Vce	4877 pF @ 25 V

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0755- 323 302 3678

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