GT750P10M Single FETs, MOSFETs_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode

: 3300

800

$0.4400

$352.0000

8000

$0.4300

$3,440.0000

16000

$0.4100

$6,560.0000

32000

$0.3600

$11,520.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Rds On (Max) @ Id, Vgs	65mOhm @ 20A, 10V
Power Dissipation (Max)	79W (Tc)
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-263
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1902 pF @ 50 V

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