GT400P10M Single FETs, MOSFETs_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode

: 883

$1.7000

$1.4100

$14.1000

100

$1.1200

$112.0000

800

$0.9500

$760.0000

1600

$0.8100

$1,296.0000

2400

$0.7700

$1,848.0000

5600

$0.7400

$4,144.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Rds On (Max) @ Id, Vgs	35mOhm @ 10A, 10V
Power Dissipation (Max)	106W (Tc)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-263
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3073 pF @ 50 V

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