GT016N10TL Single FETs, MOSFETs_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode

: 2100

2000

$1.6000

$3,200.0000

14000

$1.4700

$20,580.0000

28000

$1.3300

$37,240.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerSFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	362A (Tc)
Rds On (Max) @ Id, Vgs	1.6mOhm @ 15A, 10V
Power Dissipation (Max)	450W (Tc)
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	TOLL
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	10037 pF @ 50 V

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