GPI65007DF88 Single FETs, MOSFETs_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode_LED light emitting diode

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GPI65007DF88


Part number：	GPI65007DF88
Product Category：	Single FETs, MOSFETs
Manufacturer：	GaNPower
Description：	GaNFET N-CH 6
Encapsulation：	-
Packaging：	Tape & Reel (TR)
Quantity：	600
RoHS Status：	1

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Product parameters

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TYPE	DESCRIPTION
Mfr	GaNPower
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	7A
Vgs(th) (Max) @ Id	1.5V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On)	6V
Vgs (Max)	+7.5V, -12V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	2.1 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 500 V

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