G3K8N15HE Single FETs, MOSFETs_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode

: 5100

2500

$0.1100

$275.0000

15000

$0.1000

$1,500.0000

30000

$0.0900

$2,700.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	TO-261-4, TO-261AA
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Rds On (Max) @ Id, Vgs	370mOhm @ 2A, 10V
Power Dissipation (Max)	2.16W (Tc)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-223
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	150 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	558 pF @ 75 V

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