EPC2014C Single FETs, MOSFETs_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode

: 52111

$1.6000

$1.3100

$13.1000

100

$1.0200

$102.0000

500

$0.8600

$430.0000

1000

$0.7000

$700.0000

2500

$0.6600

$1,650.0000

5000

$0.6300

$3,150.0000

12500

$0.6000

$7,500.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	EPC
Series	eGaN®
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	Die
Mounting Type	Surface Mount
Operating Temperature	-40°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Rds On (Max) @ Id, Vgs	16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id	2.5V @ 2mA
Supplier Device Package	Die
Drive Voltage (Max Rds On, Min Rds On)	5V
Vgs (Max)	+6V, -4V
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	300 pF @ 20 V

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