CAB006A12GM3T FET, MOSFET Arrays_E-COMP GROUP INC_Integrated Circuit IC_Resistor_Capacitor_Potentiometer_Transformer_Discrete semiconductor_Memory_CPU_Diode_Triode_LED light emitting diode

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CAB006A12GM3T


：	CAB006A12GM3T
：	FET, MOSFET Arrays
：	Wolfspeed
：	SIC 2N-CH 1200V
：	-
：	Box
：	100
：

: 100

1

$368.4100

$368.4100

18

$354.5600

$6,382.0800

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Product parameters

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TYPE	DESCRIPTION
Mfr	Wolfspeed
Series	-
Package	Box
Product Status	ACTIVE
Package / Case	Module
Mounting Type	Chassis Mount
Configuration	2 N-Channel (Half Bridge)
Operating Temperature	-40°C ~ 150°C (TJ)
Technology	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds	20400pF @ 800V
Rds On (Max) @ Id, Vgs	6.9mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs	708nC @ 15V
Vgs(th) (Max) @ Id	3.6V @ 69mA
Supplier Device Package	Module

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