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A5G21H605W19NR3

  • A5G21H605W19NR3
  • image of RF FETs, MOSFETs A5G21H605W19NR3
： A5G21H605W19NR3
： RF FETs, MOSFETs
： NXP Semiconductors
： RF MOSFET LDMOS
： -
： Tape & Reel (TR)
： 100
：
A5G21H605W19N
恩智浦-NXP
2110-2200 MHz, 85 W Avg., 48 V Airfast® RF Power GaN Transistor
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrNXP Semiconductors
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseOM-780-4S4S
Mounting TypeSurface Mount
Frequency2.11GHz ~ 2.2GHz
Power - Output85W
Gain15.1dB
TechnologyGaN
Supplier Device PackageOM-780-4S4S
Voltage - Rated125 V
Voltage - Test48 V
Current - Test300 mA
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